A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

Maohai Xie and Jinglei Chen
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Maohai Xie: Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
Jinglei Chen: Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong

Surface Review and Letters (SRL), 2018, vol. 25, issue Supp01, 1-14

Abstract: This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

Date: 2018
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DOI: 10.1142/S0218625X18410020

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