EconPapers    
Economics at your fingertips  
 

THE BAND ENERGY ENGINEERING ON HIGH EPOXY (OR HYDROXYL) CONTENT GRAPHENE OXIDE

Banafsheh Alizadeh Arashloo, Mohammad Taghi Ahmadi and Saeed Afrang ()
Additional contact information
Banafsheh Alizadeh Arashloo: Department of Electrical Engineering, Miyandoab Branch, Islamic Azad University, 59717, Miyandoab, Iran†Department of Electrical Engineering, Pardis of Urmia University, 57157, Urmia, Iran
Mohammad Taghi Ahmadi: #x2020;Department of Electrical Engineering, Pardis of Urmia University, 57157, Urmia, Iran‡Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310, UTM Johor Bahru, Johor, Malaysia
Saeed Afrang: #x2020;Department of Electrical Engineering, Pardis of Urmia University, 57157, Urmia, Iran

Surface Review and Letters (SRL), 2019, vol. 26, issue 01, 1-8

Abstract: Nowadays, the superior properties of carbon-based materials especially nano structural derivation like graphene and graphene oxide (GO) spot light to the researchers. The GO has been suggested as an alternate material in device miniaturization due to its atomic structure. The memristors and nonvolatile memories are settled in these categories as a solution for the scaling limitation problem in the Moor’s law. Therefore, the GO can influence the memristor performance and characteristics. The current–voltage characteristics as the most significant parameter in the memristor design are considered. On the other hand I–V characteristic depends on the active layer (GO) bandgap energy in the metal/oxide/metal structure and therefore, needs to be explored. In the GO-based memristor, the bandgap energy can be changed by the percentage of the oxygen groups in comparison to the carbon on graphene sheets. Thus, the other parameters are overstated by the bandgap energy. In the presented work, the energy bandgap of a high epoxy group content of GO sheets is engineered. The opening of the bandgap in the graphene oxide by high epoxy groups content with the ratio of (O/C = 50%) is studied. In other words, the oxygen adsorption effect on the Hamiltonian of the system is explored. For the proposed structure, the bandgap energy is modeled and the acceptable value (approximately equal to 2.799ev for epoxy groups) is obtained. Moreover, the hydroxyl group adsorption effect on the bandgap of the graphene oxide by high content hydroxyl group is considered (approximately equal to 2.647ev for epoxy groups). Consequently, the different absorption energy effects on the bandgap of the GO is participated and the opening bandgap in the range of 2ev to 3ev is obtained. The excitonic effect on the suggested model by epoxy groups and hydroxyl groups is explored and it is realized that the energy levels in the Dirac points of epoxy groups are closer than those of the hydroxyl groups.

Keywords: Graphene oxide; band gap energy; high epoxy (or hydroxyl) group; oxygen adsorption; hamiltonian; excitonic effect (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X18501354
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:26:y:2019:i:01:n:s0218625x18501354

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X18501354

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().

 
Page updated 2025-03-20
Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:01:n:s0218625x18501354