SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

Huiting Sui, Huajun Sun, Xiaofang Liu, Shanshan Guo, Huan Yang and Renxin Xu
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Huiting Sui: School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China2Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, P. R. China
Huajun Sun: School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China2Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, P. R. China
Xiaofang Liu: School of Chemistry, Chemical Engineering and Life Sciences, Wuhan University of Technology, Wuhan 430070, P. R. China
Shanshan Guo: School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China
Huan Yang: School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China
Renxin Xu: School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

Surface Review and Letters (SRL), 2019, vol. 26, issue 03, 1-7

Abstract: BiFe1−xCrxO3 (xBFCO, x=0.01, 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO2/SiO2/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of xBFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr3+ doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10−4 at 200kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization (Pr) value of 29.8μC/cm2 with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.

Keywords: Thin films; microstructure; ferroelectrics (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1142/S0218625X18501664

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