STUDIES ON STRUCTURAL, SURFACE MORPHOLOGICAL, OPTICAL, LUMINESCENCE AND UV PHOTODETECTION PROPERTIES OF SOL–GEL Mg-DOPED ZnO THIN FILMS

A. Mahroug, B. Mari, M. Mollar, I. Boudjadar, L. Guerbous, A. Henni and N. Selmi
Additional contact information
A. Mahroug: Laboratory of Materials Physics and Its Applications, University of M’sila, M’sila 28000, Algeria
B. Mari: #x2020;Institut de Disseny per a la Fabricació i Producció Automatitzada, Departamento de Física Aplicada, Universitat Politècnica de València, Camí de Vera S/N, 46022 València, Spain
M. Mollar: #x2020;Institut de Disseny per a la Fabricació i Producció Automatitzada, Departamento de Física Aplicada, Universitat Politècnica de València, Camí de Vera S/N, 46022 València, Spain
I. Boudjadar: #x2021;Ceramics Laboratory, Department of Physics, Mentouri University of Constantine, Constantine 25000, Algeria
L. Guerbous: #xA7;Laser Department, Nuclear Research Centre of Algiers (CRNA), 2 Building Frantz Fanon, B.P. 399, Algiers 16000, Algeria
A. Henni: #xB6;Department of Biological Sciences, Kasdi Merbah University of Ouargla, Ouargla 30000, Algeria
N. Selmi: #x2225;Nuclear Research Centre of Birine, P. O. Box 180, Ain Oussera 17200, Djelfa, Algeria

Surface Review and Letters (SRL), 2019, vol. 26, issue 03, 1-8

Abstract: Undoped and magnesium-doped zinc oxide thin films were prepared by the sol–gel method. Results from X-ray diffraction indicated that the films exhibited a hexagonal wurtzite structure and were highly oriented along the c-axis. The intensity of the (002) diffraction peak increased with increasing the Mg doping concentration. Also, Mg doping inhibited the growth of crystallite size which decreased from 46nm to 38nm with doping concentration. Morphological studies by atomic force microscopy (AFM) indicated the uniform thin film growth and the decreasing of grain size and surface roughness with Mg doping. Optical analysis showed that the average transmittance of all films was above 90% in the visible range and Mg doping has significantly enhanced the bandgap energy of ZnO. Two Raman modes assigned to E2L and E2H for the ZnO wurtzite structure were observed for all films. UV emission peak and three defect emission peaks in the visible region were observed by photoluminescence measurements at room temperature. The intensity ratio of UV emission to the visible emission increased with the Mg concentration. Photocurrent measurements revealed that all films presented the photoresponses with n-type semiconducting behavior and their generated photocurrents were reduced by Mg doping. The prepared thin films of high quality with improved properties by Mg doping could be proposed to workers in the field of optoelectronic devices for using them as a strong candidate.

Keywords: Sol–gel processes; Mg-doped ZnO thin film; structural properties; optical properties; luminescence; photocurrent (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1142/S0218625X18501676

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