INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS

Wenbo Kang, Dongmei Zhu, Xiaoke Lu, Zhibin Huang, Wancheng Zhou and Fa Luo
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Wenbo Kang: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China
Dongmei Zhu: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China
Xiaoke Lu: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China
Zhibin Huang: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China
Wancheng Zhou: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China
Fa Luo: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China

Surface Review and Letters (SRL), 2019, vol. 26, issue 09, 1-6

Abstract: PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200∘C to 400∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

Keywords: PtOx films; substrate temperature; resistivity; infrared emissivity; reactive sputtering (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1142/S0218625X19500562

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