AlxGa1−xN GROWTH BY Si/N TREATMENT OF SAPPHIRE SUBSTRATE: COMPARISON WITH OTHERS GROWTH TECHNIQUES

I. Halidou, A. Touré and B. El Jani
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I. Halidou: Department of Physics, Faculty of Sciences and Technologies, Abdou Moumouni University, BP10662 Niamey, Niger
A. Touré: #x2020;Institut Supérieur des Métiers du Bâtiment, des travaux publics et de l’urbanisme, Ecole Supérieure, Polytechnique, BP 4030 Nouakchott, Mauritania
B. El Jani: #x2021;Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Faculté des Sciences de Monastir 5000 Tunisia

Surface Review and Letters (SRL), 2020, vol. 27, issue 03, 1-8

Abstract: AlxGa1−xN films were grown on Si/N-treated sapphire substrate by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) in a home-made vertical reactor. This process can be considered as randomly in situ epitaxial lateral overgrowth (ELO) technology. The growth firstly begins by three-dimensional (3D) mode and is completed in two-dimensional (2D) growth mode as shown by real time in situ laser (λ=632.8nm) reflectometry measurements and confirmed by scanning electron microscopy (SEM) images. Secondary ion mass spectroscopy (SIMS) measurements evidence Al composition pulling effect in the AlxGa1−xN layer. The Si/N treatment technique is compared to conventional AlxGa1−xN growth techniques. The results of high-resolution X-ray diffraction (HRXRD), photoluminescence (PL) measurements and SEM images agree well on the fact that the Si/N treatment produces AlxGa1−xN layers with comparable qualities of AlxGa1−xN layers grown on high temperature GaN template but with much higher qualities than AlxGa1−xN layers grown on low temperature AlN nucleation layer. Moreover, the Si/N treatment technique permits the growth of high quality AlxGa1−xN layers with appreciable thicknesses with respect to the others techniques.

Keywords: MOVPE; Si/N treatment; AlxGa1−xN; SIMS; X-ray diffraction; SEM; photoluminescence (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X19501166

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