PICOSECOND LASER MICROMACHINING OF SILICON WAFER: CHARACTERIZATIONS AND ELECTRICAL PROPERTIES

Zhihao Fang, Longfei Chen, Yingchun Guan and Hongyu Zheng
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Zhihao Fang: School of Energy and Power Engineering, Beihang University, 37 Xueyuan Road, Beijing 100191, P. R. China
Longfei Chen: School of Energy and Power Engineering, Beihang University, 37 Xueyuan Road, Beijing 100191, P. R. China
Yingchun Guan: #x2020;School of Mechanical Engineering and Automation, Beihang University, 37 Xueyuan Road, Beijing 100191, P. R. China‡National Engineering Laboratory of Additive Manufacturing for Large Metallic Components, 37 Xueyuan Road, Beijing 100191, P. R. China
Hongyu Zheng: #xA7;Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 Singapore, Singapore

Surface Review and Letters (SRL), 2020, vol. 27, issue 05, 1-8

Abstract: This work presents the feasibility of picosecond laser micromachining of polysilicon wafer. Surface topography, microstructure and residual stress of both as-received surface and laser-machined surface were analyzed carefully by confocal microscope, scanning electron microscope and Raman microscope. Moreover, electrical properties of laser-machined wafer have been investigated to examine the effect of laser micromachining on Si substrate via characterizations of resistivity and I−V curves. The results show that the wafer thickness has been reduced up to 50%, while the depth of HAZ is less than 3μm, and compressive stress can be achieved at the laser-machined surface. Besides, laser micromachining causes little influence on electrical properties of wafer. This proof-of-concept process has the potential application in mass production of integrated circuit industry.

Keywords: Laser micromachining; silicon wafer; ablation; electrical properties; residual stress (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X19501427

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