TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs

A. D. D. Dwivedi and Pooja Kumari ()
Additional contact information
A. D. D. Dwivedi: Department of Electrical and Electronics Engineering, Poornima University, Jaipur, India
Pooja Kumari: Department of Electrical and Electronics Engineering, Poornima University, Jaipur, India

Surface Review and Letters (SRL), 2020, vol. 27, issue 05, 1-7

Abstract: This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.

Keywords: Single gate OTFT; dual gate OTFT; numerical simulation; technology computer-aided design (TCAD) (search for similar items in EconPapers)
Date: 2020
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X19501452
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:27:y:2020:i:05:n:s0218625x19501452

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X19501452

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().