ZnO-Ge MULTILAYER THIN FILM STRUCTURES DEPOSITED BY THERMAL EVAPORATION TECHNIQUE

Naeem Ur-Rehman, Mazhar Mehmood, Abdul Faheem Khan, Syed Mansoor Ali and M. Ashraf
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Naeem Ur-Rehman: #x2020;National Centre for Nanotechnology, Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad 45650, Pakistan
Mazhar Mehmood: Department of Physics, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan 64200, Pakistan
Abdul Faheem Khan: #x2021;Department of Materials Science and Engineering, IST, Islamabad, Pakistan
Syed Mansoor Ali: #xA7;Department of Physics and Astronomy, College of Science, P. O. Box 2455, King Saud University, Riyadh, Saudi Arabia
M. Ashraf: #xB6;Optics Labs, P. O. Nilore, Islamabad, Pakistan

Surface Review and Letters (SRL), 2020, vol. 27, issue 05, 1-9

Abstract: Zinc oxide and germanium multilayer films have been deposited on glass substrate using electron beam evaporation and resistive heating system, respectively, for alternate layers. The structural optical and electrical parameters have been investigated for the deposited films. The layer formation was confirmed by employing Rutherford back-scattering technique. Optical properties exhibit quantum confinement effect by showing the separate band gaps for ZnO and Ge. Electrical conductivity increases due to combined effect of all six layers (six alternate layers of Ge and ZnO).

Keywords: Zinc oxide; germanium; multilayer; Rutherford back-scattering; reflectance (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X1950149X

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