SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS

Bestoon Anwer Gozeh, Abdulkerim Karabulut, Mudhaffer M Ameen, Abdulkadir Yildiz and Fahrettin Yakuphanoğlu
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Bestoon Anwer Gozeh: Shaqlawa Technical Institute, Erbil Polytechnic University, Erbil, Iraq†Physics Department, College of Education, Salahaddin University-Erbil, Iraq
Abdulkerim Karabulut: #x2021;Department of Electrical and Electronics Engineering, Faculty of Engineering, Sinop University, Sinop, Turkey
Mudhaffer M Ameen: #x2020;Physics Department, College of Education, Salahaddin University-Erbil, Iraq
Abdulkadir Yildiz: #xA7;Department of Bioscience and Engineering, Kahrmanmaraş Sütçü Imam University, Kahrmanmaraş, Turkey
Fahrettin Yakuphanoğlu: #xB6;Department of Physics, Fırat University, Elazığ, Turkey∥Nanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey

Surface Review and Letters (SRL), 2020, vol. 27, issue 07, 1-13

Abstract: In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol–gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I–V and C/G–V characteristics under dark and different illumination conditions. Herein, from I–V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of Ion/Ioff were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The Rs–V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.

Keywords: Electrical characteristics; doped ZnO; sol–gel; photoresponse; photodetector (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X19501737

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