HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE

Rafał Lewandków, Radosław Wasielewski () and Piotr Mazur ()
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Rafał Lewandków: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204
Radosław Wasielewski: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204
Piotr Mazur: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204

Surface Review and Letters (SRL), 2020, vol. 27, issue 11, 1-4

Abstract: The growth and stability of hafnium films on n-GaN(0001) surface with native oxide was investigated with X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). It is shown that hafnium creates a continuous and stable layer on GaN substrate. Thermal treatment at 850∘C of Hf/GaN system causes decomposition of GaN and reaction of hafnium with atomic nitrogen from the substrate. XPS spectra demonstrate the reaction by a strong shift of the N 1s and Hf 4f lines. An attempt for bringing on the same reaction with molecular nitrogen under pressure of 1.2×10−6 mbar was not successful. UPS spectra show a metallic character of the hafnium adlayer in such instances.

Keywords: Gallium nitride; hafnium; nitrogen; adlayer reaction; interface (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X20500134

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