XPS, AES AND UPS INVESTIGATION OF SnO2/Si AND DFT-BASED THEORETICAL STUDY WITHIN THE mBJ-GGA SCHEME

A. Mokadem, M. Bouslama, B. Kharoubi, A. Ouerdane, R. Khenata, M. Guezzoul, A. Baizid, M. Abdelkrim, K. B. Bensassi, S. H. Naqib and Xiaotian Wang
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A. Mokadem: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria†Département de Science et Technologie, Faculté de Technologie, Université Hassiba, Ben Bouali 02000 Chlef, Algeria
M. Bouslama: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
B. Kharoubi: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
A. Ouerdane: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
R. Khenata: #x2021;Laboratoire de Physique Quantique de la, Matière et de Modélisation Mathématique (LPQ3M), Université de Mascara 29000 Mascara, Algeria
M. Guezzoul: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
A. Baizid: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
M. Abdelkrim: Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique Maurice Audin (ENP), d’Oran BP 1523 Oran Mnaouar Oran, Algeria
K. B. Bensassi: #xA7;LMESM, Faculté des Sciences, U.S.T. Oran 31000 Oran, Algeria
S. H. Naqib: #xB6;Department of Physics, University of Rajshahi, Rajshahi 6205, Bangladesh
Xiaotian Wang: #x2225;School of Physical Science and Technology, Southwest University, Chongqing 400715, P. R. China

Surface Review and Letters (SRL), 2021, vol. 28, issue 02, 1-7

Abstract: We investigate the growth performance of tin oxide on the Si substrate, achieved by spray pyrolysis using the sensitive analysis techniques X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). These complementary techniques confirm the growth of homogeneous SnO2 thin films. We also study the electronic distribution of the valence band of SnO2 theoretically using density functional theory (DFT). The chemical and physical properties of the material depend on the electron structure varying as a function of energy. The density of states (DOS) is calculated using the modified Becke–Johnson-Generalized Gradient Approximation (mBJ-GGA) in order to identify the electronic orbitals and the importance of their contribution to the electronic structure of the valence band. Furthermore, we use the experimental technique UV Photoelectron Spectroscopy (UPS) for studying the electronic distribution within the valence band and for validating the theoretical results of the density of states of SnO2/Si.

Keywords: SnO2; electronic structure; mBJ-GGA scheme; spectroscopic characterization techniques (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X20500481

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