A STUDY OF FEMTOSECOND LASER POLISHING OF CVD NANOPOLYCRYSTALLINE DIAMOND FILMS

Yu-Xiao Cui, Ping Guo, Xueming Zhu, Yan-Ling Tian, Da-Wei Zhang and Hou-Jun Qi
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Yu-Xiao Cui: School of Mechanical Engineering, Tianjin University of Technology and Education, Tianjin 300222, P. R. China
Ping Guo: School of Mechanical Engineering, Tianjin University of Technology and Education, Tianjin 300222, P. R. China
Xueming Zhu: School of Mechanical Engineering, Tianjin University of Technology and Education, Tianjin 300222, P. R. China
Yan-Ling Tian: #x2020;School of Mechanical Engineering, Tianjin University, Tianjin 300072, P. R. China
Da-Wei Zhang: #x2020;School of Mechanical Engineering, Tianjin University, Tianjin 300072, P. R. China
Hou-Jun Qi: School of Mechanical Engineering, Tianjin University of Technology and Education, Tianjin 300222, P. R. China

Surface Review and Letters (SRL), 2021, vol. 28, issue 04, 1-7

Abstract: Femtosecond (fs) laser ablation has been recognized as an effective and promising technique for high-precision processing of natural and synthesized diamond. In this work, a study of femtosecond laser polishing for nanopolycrystalline diamond (NCD) films by chemical vapor deposition (CVD) is reported. The laser irradiation is induced by 200-fs laser pulses with a repetition frequency of 50MHz, and various laser fluences are employed to investigate their polishing effectiveness. The results show that the optimal laser fluence is 0.7J/cm2, at which the nanodiamond grains on top of the cauliflower-like clusters of NCD films can be ablated. With such laser fluence, the mean surface roughness of NCD films reduces from 73.84nm to 31.88nm, which presents a 57% reduction. Nevertheless, when the laser fluence rises beyond 0.7J/cm2, large amount of amorphous carbon (a-C) balls and porous lava-like morphology would come into being, resulting in severe degradation of the NCD surface.

Keywords: Laser polishing; femtosecond laser; nanocrystalline; diamond films; CVD (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X21500232

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