PHOTOELECTRON SPECTROSCOPY STUDIES ON Al2O3 FILMS ON p-GaN(0001)

R. Lewandków, M. Grodzicki and P. Mazur
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R. Lewandków: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, 50-137 Poland
M. Grodzicki: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, 50-137 Poland
P. Mazur: Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, 50-137 Poland

Surface Review and Letters (SRL), 2021, vol. 28, issue 09, 1-7

Abstract: In order to determine its electronic and chemical properties, the Al2O3/p-GaN(0001) interface is studied in situ by the X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Using physical vapor deposition (PVD) method, the Al2O3 film is deposited step by step under ultra-high vacuum (UHV) onto p-GaN(0001) surface covered with residual native Ga oxide. Prior to the first Al2O3 layer evaporation, binding energy of the Ga 3d substrate line is equal to 20.5eV. The PVD method of deposition leads to an amorphous Al2O3 film formation. For the final 12.0nm thick Al2O3 film binding energy of the Al 2p line is set at 76.0eV and for the O 1s line at 532.9eV. The valence band offset (VBO) and the conduction band offset (CBO) of the Al2O3/p-GaN(0001) interface are determined to be equal to −1.6eV and 1.8eV, respectively.

Keywords: Semiconductor; p-GaN; Al2O3 thin films; Al2O3/p-GaN interface; valence band; photoelectron spectroscopy (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X21500773

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