IMPROVEMENT IN STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILM THROUGH AlN AND HfO2 BUFFER LAYERS

Naser M. Ahmed, Noor Humam Sulaiman, Mahir Faris Abdullah, Asmaa Soheil Najm, Naveed Afzal, Abeer S. Altowyan and Mohsin Rafique
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Naser M. Ahmed: School of Physics, Universiti Sains Malaysia, USM Penang, 11800 Penang, Malaysia
Noor Humam Sulaiman: ��Department of Mechanical and Manufacturing Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia
Mahir Faris Abdullah: ��Department of Refrigeration and Air Conditioning Engineering, Al-Rafidian University College, Baghdad 10001, Iraq
Asmaa Soheil Najm: �Department of Electrical and Electronic Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia
Naveed Afzal: �Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan
Abeer S. Altowyan: ��Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia
Mohsin Rafique: �Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan

Surface Review and Letters (SRL), 2021, vol. 28, issue 10, 1-9

Abstract: Indium Tin Oxide (ITO) films were deposited on glass substrate using radiofrequency (RF) magnetron sputtering technique. To improve the physical characteristics of the ITO film, AlN and HfO2 buffer layers were deposited on glass prior to the film deposition. The ITO/glass, ITO/AlN/glass and ITO/HfO2/glass films were annealed using CO2 laser and electrical oven heating methods. The crystallinity of the ITO film was improved due to the incorporation of AlN and HfO2 buffer layers and also by the post-deposition annealing process. The optical transmittance of the ITO was also increased due to the presence of the buffer layers. Similarly, the annealed ITO films grown on buffer layers exhibited lower values of the sheet resistance as compared to the film deposited without buffer layers. The laser annealing technique was more found to be more effective in reducing the ITO sheet resistance.

Keywords: Thin film; ITO; radio frequency (RF) sputtering; buffer layers; annealing methods (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X21500943

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