A NEW APPROXIMATION: FROM BARRIER LOWERING TO INTERFACE STATE DENSITY

Abdulkadir Korkut ()
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Abdulkadir Korkut: Department of Physics, Faculty of Science, Yüzüncü Yıl University, 65080 Van, Turkey

Surface Review and Letters (SRL), 2021, vol. 28, issue 12, 1-14

Abstract: In this study, a set of the interface state density (ISD) formulae was derived from the Schottky effect. In contrast to the conventional approximation, a new approximation for the ISD formulae gives very unusual values in the case of forward bias or reverse bias. The former ISD formula contains the oxide thickness in the metal–semiconductor interface region, whereas the new approximation formulae do not contain the oxide thickness. They depend on the applied voltage and built-in potential in the case of both bias. Besides, lowering barrier height is called the Schottky effect. A couple of the new ISD formulae can be proportioned to each other. The ratio is a new coefficient. Moreover, the coefficient is inversely proportional with the a cceptor concentration and third power of zero-voltage depletion length. Moreover, that fraction is inversely proportional to the acceptor concentration and cubic power to depletion length.

Keywords: Interface state density; Schottky effect; lowering the barrier height; differential depletion length (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X21501250

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