TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

Yong-Hong Kong, Ai-Hua Li, Yan-Jun Gong and Xi Fu
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Yong-Hong Kong: Hunan University of Science and Engineering, Yongzhou 425100, China
Ai-Hua Li: Hunan University of Science and Engineering, Yongzhou 425100, China
Yan-Jun Gong: Hunan University of Science and Engineering, Yongzhou 425100, China
Xi Fu: Hunan University of Science and Engineering, Yongzhou 425100, China

Surface Review and Letters (SRL), 2022, vol. 29, issue 01, 1-6

Abstract: We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a δ-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a δ-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of δ-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

Keywords: Layered semiconductor nanostructure; Rashba spin-orbit coupling; δ-potential; spin polarization; tunable spin filter (search for similar items in EconPapers)
Date: 2022
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DOI: 10.1142/S0218625X22500019

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