ZnGa2O4 THIN FILM TRANSISTORS AND PHOTOTRANSISTORS BY RF SPUTTERING METHOD

En-Min Huang, Sheng-Po Chang, Tzu-Yuan Liu, Yun-Chieh Tsai, Shoou-Jinn Chang and Jone-Fang Chen
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En-Min Huang: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
Sheng-Po Chang: ��Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 88157, Taiwan
Tzu-Yuan Liu: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
Yun-Chieh Tsai: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
Shoou-Jinn Chang: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
Jone-Fang Chen: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan

Surface Review and Letters (SRL), 2025, vol. 32, issue 08, 1-7

Abstract: In this study, ZnGa2O4 thin-film transistors (TFTs) with various channel layer thicknesses were fabricated using radio frequency (RF) magnetron sputtering. The thickness of 30nm exhibited the best performance and outstanding gate-control ability with an on/off current ratio of 6.48×105, threshold voltage (VT) of 3.28V, and subthreshold swing (SS) of 0.31V/decade. ZnGa2O4, as a wide-bandgap highly transparent semiconducting material, is a potential candidate for optoelectronic applications. Therefore, we extended the applicability of ZnGa2O4 TFT with 30nm channel layer thickness to phototransistors. The phototransistor had a maximum responsivity of 0.0025A/W and a UV-to-visible rejection ratio of 9.80×103 at a bias voltage (VG) of −2 V.

Keywords: Zinc gallium oxide; thin-film transistor; phototransistor (search for similar items in EconPapers)
Date: 2025
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DOI: 10.1142/S0218625X25400098

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