High-Efficiency Front Junction n-Type Crystalline Silicon Solar Cells

Yuguo Tao and Ajeet Rohatgi

A chapter in Nanostructured Solar Cells from IntechOpen

Abstract: This chapter aims to provide students/workers in the field of photovoltaics with the valuable information and knowledge needed to understand the physics and operation of high-efficiency front junction n-type crystalline silicon solar cells. The surface recombination and passivation mechanisms, and several promising passivation schemes for front and back cell surfaces, are addressed and reviewed. The advanced cell structures and their fabrication schemes to achieve higher efficiency are described and discussed, including selective emitter on the front and locally doped back surface filed or carrier selective rear contact composed of tunnel oxide and phosphorus-doped polycrystalline silicon thin film. These advanced cell design features have become highly active areas of investigations in the photovoltaic industry for next-generation production cells.

Keywords: front junction; recombination; surface passivation; selective emitter; tunnel oxide passivated contact; high efficiency (search for similar items in EconPapers)
JEL-codes: Q20 Q40 (search for similar items in EconPapers)
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.intechopen.com/chapters/52139 (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:ito:pchaps:105569

DOI: 10.5772/65023

Access Statistics for this chapter

More chapters in Chapters from IntechOpen
Bibliographic data for series maintained by Slobodan Momcilovic ().