Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy

Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita and Masafumi Yamaguchi

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Persistent link: https://EconPapers.repec.org/RePEc:ito:pchaps:22653

DOI: 10.5772/20234

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