The Superconducting Single Electron Transistor: in situ Variation of the Dissipation

J. B. Kycia, J. Chen, R. Therrien, Ç. Kurdak, K. L. Campman, A. C. Gossard and John Clarke
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J. B. Kycia: University of California, Department of Physics
J. Chen: University of California, Department of Physics
R. Therrien: University of California, Department of Physics
Ç. Kurdak: University of California, Department of Physics
K. L. Campman: University of California, Department of Physics
A. C. Gossard: University of California, Department of Physics
John Clarke: University of California, Department of Physics

A chapter in Macroscopic Quantum Coherence and Quantum Computing, 2001, pp 101-110 from Springer

Abstract: Abstract We have fabricated a superconducting single electron transistor (sSET) on a GaAs/AlGaAs substrate containing a two-dimensional electron gas (2DEG) about 100 nm below the surface. The island separating the two junctions, each of resistance 18 kΩ, and the leads connected to the sSET are capacitively coupled to the 2DEG. Depleting the 2DEG by means of a voltage applied to a back gate enables us to decrease the dissipation experienced by the sSET in situ. The measured minimum zero-bias conductance, G o min , of the sSET follows the approximate power law dependences G o min ∝ T α g β , where T is the temperature and g ≡ R K /4R g ; here R K = h/e 2 and R g is the resistance per square of the 2DEG. We find α ≈ — 1 and β ≈ 0.2 — 0.4, depending on the temperature. These results are in qualitative agreement with the theory of Wilhelm et al. However, the fact that β, in particular, has a temperature dependence suggests that one cannot separate the temperature and dissipation dependences with the functional form Tαg β .

Keywords: Transmission Line; Gate Voltage; Cooper Pair; Tunnel Junction; Transmission Line Model (search for similar items in EconPapers)
Date: 2001
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DOI: 10.1007/978-1-4615-1245-5_11

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