Noise properties of the SET transistor in the co-tunneling regime

D. V. Averin
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D. V. Averin: SUNY, Department of Physics and Astronomy

A chapter in Macroscopic Quantum Coherence and Quantum Computing, 2001, pp 399-407 from Springer

Abstract: Abstract Zero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrected co-tunneling events. Charge noise is created by the co-tunneling and also by the second-order transitions in a single junction. Calculated spectral densities determine transistor characteristics as quantum detector.

Keywords: Gate Voltage; Current Noise; Noise Property; Bias Voltage Versus; Noise Spectral Density (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-1-4615-1245-5_40

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DOI: 10.1007/978-1-4615-1245-5_40

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