Breakdown of Thin-Film Dielectrics

James U. Gleaton (), David Han, James D. Lynch, Hon Keung Tony Ng and Fabrizio Ruggeri
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David Han: University of Texas at San Antonio, Management of Science and Statistics
James D. Lynch: University of South Carolina, Department of Statistics
Hon Keung Tony Ng: Bentley University, Department of Mathematical Sciences
Fabrizio Ruggeri: Consiglio Nazionale delle Ricerche, Istituto di Matematica Applicata e Tecnologie Informatiche

Chapter Chapter 3 in Fiber Bundles, 2022, pp 39-52 from Springer

Abstract: Abstract We are considering the breakdown mechanisms of a thin-film dielectric. The earlier type of dielectric used in electronic circuits, silicon dioxide, is generated on a metal substrate by a chemical vapor deposition process (Chu, 2014). The deposition process is usually performed at relatively low temperatures to avoid defect formation, diffusion, and degradation of the metal layers.

Date: 2022
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DOI: 10.1007/978-3-031-14797-5_3

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