Tubular Channel Triple-Material Gate-Wrap-Around MOSFET for Industry 5.0-Low Power and High Performance Applications Incorporating Temperature Variations

Pritha Banerjee and Jayoti Das
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Pritha Banerjee: Jadavpur University
Jayoti Das: Jadavpur University

A chapter in Industry 5.0, 2025, pp 381-411 from Springer

Abstract: Abstract Analytical modeling and simulation-based performance exploration of Tubular Channel Triple-Material Gate-Wrap-Around (TC TM GWA) MOSFET has been accentuated in the current investigation. Results revealed offer illustrative analysis of salient device features like threshold voltage, subthreshold swing, drain current, switching ratio and their response towards temperature alterations. Elucidative insights on channel dimension shrinkages on device features are provided. Comparative assessment of the recommended device performance with its Single-Material Gate Equivalent in terms of threshold voltage, drain-induced barrier lowering, and hot carrier effect reveals the benefits of using gate work function in the recommended device. The analytical results have been authenticated using simulation outputs from Silvaco Atlas 3D.

Keywords: Gate work function engineering; Tubular channel; Threshold voltage; Drain-induced barrier lowering (DIBL); Hot carrier effects; Switching ratio; Subthreshold swing (search for similar items in EconPapers)
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-031-87837-4_16

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DOI: 10.1007/978-3-031-87837-4_16

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