Numerical Methods for the Simulation of Epitaxial Growth and their Application in the Study of a Meander Instability

F. Haußer (), F. Otto (), P. Penzler () and A. Voigt ()
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F. Haußer: Technische Fachhochschule Berlin, FB II
F. Otto: Universität Bonn, IAM
P. Penzler: Universität Bonn, IAM
A. Voigt: Technische Universität Dresden, IWR

A chapter in Mathematics – Key Technology for the Future, 2008, pp 53-73 from Springer

Abstract: Abstract The surface morphology of thin crystalline films grown by molecular beam epitaxy (MBE), a technique to produce high-quality, almost defect-free crystals, is strongly influenced by kinetic processes on an atomistic scale. To incorporate these effects in a continuum model requires some care. Here we use a step flow model, which is a free boundary problem for the position of atomic height steps on the crystalline surface.We present two complementary approaches to derive a numerical method for solving this problem: a front tracking ansatz and a diffuse interface approximation. The numerical methods are used to study the nonlinear regime of a step meandering instability.

Keywords: Epitaxial Growth; Free Boundary Problem; Nonlinear Regime; Kinetic Monte Carlo; Front Tracking (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-540-77203-3_6

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DOI: 10.1007/978-3-540-77203-3_6

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