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Simulation of Industrial Crystal Growth by the Vertical Bridgman Method

Gerhard Dziuk, Stefan Boschert, Alfred Schmidt, Kunibert G. Siebert, Eberhard Bänsch, Klaus-Werner Benz and Thomas Kaiser
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Gerhard Dziuk: Institut für Angewandte Mathematik, Universität Freiburg
Stefan Boschert: Kristallographisches Institut, Universität Freiburg
Alfred Schmidt: Institut für Angewandte Mathematik, Universität Freiburg
Kunibert G. Siebert: Institut für Angewandte Mathematik, Universität Freiburg
Eberhard Bänsch: Zentrum für Technomathematik, Universität Bremen
Klaus-Werner Benz: Kristallographisches Institut, Universität Freiburg
Thomas Kaiser: Kristallographisches Institut, Universität Freiburg

A chapter in Mathematics — Key Technology for the Future, 2003, pp 315-330 from Springer

Abstract: Abstract Single crystals of Cadmium-Zinc-Telluride are used as a substrate material for the production of infrared detectors and are usually grown by the vertical Bridgman method. We present a simulation of the whole growth process in two steps: In the first step, the (stationary) heat transport in the furnace is modeled and calculated for different positions of the ampoule. This provides information about the most important parameter during this process: the temperature distribution in furnace and ampoule. The obtained temperatures are then used in the second step as boundary conditions for the (time dependent) simulation of temperature and convection in the ampoule. Only the use of adaptive finite element methods allows an efficient numerical simulation of the moving phase boundary, the convection in the melt and the temperature distribution in melt and crystal. Numerical results are presented for both furnace and ampoule simulations.

Keywords: Posteriori Error; Time Step Size; Stefan Problem; Finite Element Space; Posteriori Error Estimator (search for similar items in EconPapers)
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-55753-8_26

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DOI: 10.1007/978-3-642-55753-8_26

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