Quantum Mechanical Studies of Boron Clustering in Silicon

Péter Déak, Ádám Gali, Peter Pichler and Heiner Ryssel
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Péter Déak: Budapest University of Technology and Economics, Department of Atomic Physics
Ádám Gali: Budapest University of Technology and Economics, Department of Atomic Physics
Peter Pichler: Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie
Heiner Ryssel: Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie

A chapter in High Performance Computing in Science and Engineering ’03, 2003, pp 381-392 from Springer

Abstract: Abstract Boron-interstitial clusters (BICs) are known to be a key problem to controlling diffusion and activation of ultra-shallow boron implants in ULSI silicon device technology. During post-implantation annealing the self-interstitials, which had been created by the radiation damage, mediate fast transient diffusion of boron, during which stable and metastable BICs are formed. The BICs are either electrically inactive or the number of holes they can provide per number of boron atoms is significantly less than one. This causes a significant decrease in the activation rate. Therefore, sophisticated annealing strategies have to be developed to regain isolated boron substitutionals from BICs.

Keywords: Boron Atom; Raman Active Mode; Boron Cluster; Local Vibrational Mode; Quantum Mechanical Study (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1007/978-3-642-55876-4_28

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