The Oxidation Process of Silicon

W. Merz
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W. Merz: Technische Universität München, Zentrum Mathematik

A chapter in Lectures on Applied Mathematics, 2000, pp 217-231 from Springer

Abstract: Abstract In electronic devices the electrical insulation of different areas is often achieved by layers of silicon-dioxide. These are usually created by exposing the silicon wafers at process temperatures between 700–1200°C to a gas flow containing oxygen or to a stream. Using different oxygen isotrops tracer experiments have shown that the new oxide is created at the interface between silicon and silicon-dioxide.

Keywords: Free Boundary; Momentum Balance; Reaction Front; Kinematic Equation; Phase Field Model (search for similar items in EconPapers)
Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-59709-1_15

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DOI: 10.1007/978-3-642-59709-1_15

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