Modellierung und Simulation von Quantum—Well—Halbleiterlasern

H. Gajewski (), H.-Chr. Kaiser, J. Rehberg, H. Stephan and H. Wenzel
Additional contact information
H. Gajewski: Weierstraß Institut für Angewandte Analysis und Stochastik (WIAS)
H.-Chr. Kaiser: Weierstraß Institut für Angewandte Analysis und Stochastik (WIAS)
J. Rehberg: Weierstraß Institut für Angewandte Analysis und Stochastik (WIAS)
H. Stephan: Weierstraß Institut für Angewandte Analysis und Stochastik (WIAS)
H. Wenzel: Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH)

A chapter in Mathematik Schlüsseltechnologie für die Zukunft, 1997, pp 281-291 from Springer

Abstract: Abstract The development of modern quantum-well semiconductor lasers requires effective numerical tools for their simulation. In cooperation of physicists from the FBH and mathematicians from the WIAS design and optimization of high-power semiconductor lasers could be achieved using the WIAS based semiconductor device simulator ToSCA. The main theoretical problem is the connection and interaction of microscopic (Schroedinger’s equation) and macroscopic (drift—diffusion equations) models in the same domain. Modelling, analysis, numerics and simulation of quantum-well semiconductor lasers are shown. As examples, ToSCA-simulations of aluminum-free RISAS and ARROW type lasers operating at 800 nm and 940 nm, respectively, are presented.

Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-60550-5_24

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DOI: 10.1007/978-3-642-60550-5_24

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