The Internal Field in Semiconductors

F. Klvaňa

Chapter Chapter 5 in Solving Problems in Scientific Computing Using Maple and MATLAB®, 1997, pp 73-81 from Springer

Abstract: Abstract Let us consider a semiconductor of length l in x-direction, which is doped with a concentration of electrically active impurities $$C(x) = C^{+}_{D}{(x)} - C^{-}_{A}{(x)}$$ The $$C^{-}_{A}{(x)}, C^{+}_{D}{(x)}$$ are the acceptor and donor impurity concentrations respectively and are independent of y and z. Let this semiconductor be connected to an external potential U(x) with U(0) = U 0 and U(l) = 0. Then, if the semiconductor has sufficiently large dimensions in y- and z-directions, all physical properties will depend only on x, and we can study it as a one-dimensional object.

Keywords: Sparse Matrice; Tridiagonal Matrix; Active Impurity; Builtin Potential; Tridiagonal System (search for similar items in EconPapers)
Date: 1997
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DOI: 10.1007/978-3-642-97953-8_5

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