Scaling behavior of the surface roughness in the crystallization process:transformation of polycrystalline Si from amorphous Si

N. Fujiyama, S. Tanda, Y. Takagi, K. Sajiki and Y. Niwatsukino
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N. Fujiyama: Hokkaido Univ., Dept. of Applied Phys.
S. Tanda: Hokkaido Univ., Dept. of Applied Phys.
Y. Takagi: Hokkaido Univ., Dept. of Applied Phys.
K. Sajiki: Komatsu Ltd., Research Division
Y. Niwatsukino: Komatsu Ltd., Research Division

A chapter in Complexity and Diversity, 1997, pp 114-116 from Springer

Abstract: Abstract We made polycrystalline silicon (poly-Si) thin films from amorphous silicon (a-Si) thin films by the excimer-laser crystallization method. And we have investigated the surface roughness in the process from a-Si to poly-Si crystallized gradually by changing the energy density E of the excimer-laser. By using atomic force microscopy (AFM), the surface width W(L, E) is estimated as the root mean square (rms) value of the roughness, where L is the length scale, E the energy density of the excimer-laser. We discovered a new scaling law in the crystallization process. We observed W (L, E) ~ L α (L ≪ L x ), and the saturation width W sat (E) scaled with E as W sat (E) ~ E β* (L ≫ L x ), where L x is the crossover length, the roughness exponent α = 0.88 ± 0.10, and the exponent β* = 1.37 ± 0.10, respectively.

Keywords: roughness; surface; crystallization; dynamic scaling; atomic force microscopy (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-4-431-66862-6_20

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DOI: 10.1007/978-4-431-66862-6_20

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