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Magnetic tunnel junctions

Günter Reiss, Jan-Michael Schmalhorst, Andy Thomas, Andreas Hütten and Shinji Yuasa
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Günter Reiss: Center for Mathematical Economics, Bielefeld University
Jan-Michael Schmalhorst: Center for Mathematical Economics, Bielefeld University
Andy Thomas: Center for Mathematical Economics, Bielefeld University
Andreas Hütten: Center for Mathematical Economics, Bielefeld University
Shinji Yuasa: Center for Mathematical Economics, Bielefeld University

No 227, Center for Mathematical Economics Working Papers from Center for Mathematical Economics, Bielefeld University

Abstract: In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically. We will cover Al-O and MgO based junctions and present highly spin-polarized electrode materials such as Heusler alloys. Furthermore, we will give a short overview on applications such as read heads in hard disk drives, storage cells in MRAMs, field programmable logic circuits and biochips. Finally, we will discuss the currently growing field of current induced magnetization switching.

New Economics Papers: this item is included in nep-upt
Date: 2010-04-29
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