Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity

Ryun-Han Koo, Wonjun Shin, Gyuweon Jung, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon and Jong-Ho Lee

Chaos, Solitons & Fractals, 2024, vol. 183, issue C

Abstract: This study comprehensively analyzes of the influence of bottom electrode crystallinity on the stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis of stochastic read noise in FTJ devices with crystalline silicon (FTJc-Si) and poly-silicon (FTJpoly-Si) bottom electrodes by utilizing low-frequency noise spectroscopy and multi-frequency conductance measurements. The results indicate that FTJpoly-Si exhibits a 50 % higher read current fluctuation in the high-resistance state (HRS) at high read currents compared to FTJc-Si due to differences in interface trap density and the subsequent barrier height fluctuations. Although the crystallinity of the bottom electrode affects the noise in the HRS, the noise in the low-resistance state (LRS) remains consistent with the consequence of bulk-limited Poole-Frenkel emission. These findings clarify the relationship between bottom electrode crystallinity and stochastic noise in FTJs, providing crucial insights for the design and operation of future ferroelectric-based memory.

Keywords: Low-frequency noise (LFN); Stochastic read noise; Current fluctuation; Transient response; Ferroelectric tunnel junction (FTJ); Hafnium zirconium oxide (HfZrO2); Crystallinity (search for similar items in EconPapers)
Date: 2024
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Persistent link: https://EconPapers.repec.org/RePEc:eee:chsofr:v:183:y:2024:i:c:s0960077924004132

DOI: 10.1016/j.chaos.2024.114861

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