Comparison of potential-induced degradation (PID) of n-type and p-type silicon solar cells

Jan Šlamberger, Michael Schwark, Bas B. Van Aken and Peter Virtič

Energy, 2018, vol. 161, issue C, 266-276

Abstract: Potential-induced degradation (PID) of photovoltaic (PV) modules is one of the most severe types of degradation, where power losses on system level may even exceed 30%. The PID process depends on the strength of the electric field, the temperature, the relative humidity, conductive soiling, time and the PV module materials. For p-type cells, it has been established that the decrease of the shunt resistance, due to migration of sodium ions across the n/p junction is the root cause of the degradation. On the other hand, it has recently been confirmed for n-type cells that the PID occurs due to an increase in recombination as charges are driven to the anti-reflection (AR) coating/emitter interface. In this paper, we present the comparison between PID of p-type and n-type crystalline silicon (c-Si) solar cells and their progression of PID. The time evolution of PID is studied by light and dark I-V curve measurements, electroluminescence images and progressions of the one- and two-diode equivalent model parameters, viz. photocurrent, 1st and 2nd diode reverse saturation currents, 1st and 2nd diode ideality factors, shunt resistance and series resistance.

Keywords: Photovoltaic (PV) systems; Potential-induced degradation (PID); Crystalline silicon (c-si) solar cells; n-type; p-type (search for similar items in EconPapers)
Date: 2018
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Citations: View citations in EconPapers (3)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:energy:v:161:y:2018:i:c:p:266-276

DOI: 10.1016/j.energy.2018.07.118

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