On a Petrov–Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions

John J.H. Miller

Mathematics and Computers in Simulation (MATCOM), 1987, vol. 29, issue 5, 367-372

Abstract: We consider the equations governing the electrical and thermal behaviour of a semiconductor device in two dimensions. A non-standard Petrov-Galerkin method is used to obtain a discretisation of the equations for stationary problems. The resulting scheme is a generalization to the two-dimensional case and to the full set of equations of the well-known Scharfetter-Gummel scheme, which is the most successful discretisation for one-dimensional problems. The dependent variables used are the carrier densities, the electrostatic potential and the absolute temperature.

Date: 1987
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:29:y:1987:i:5:p:367-372

DOI: 10.1016/0378-4754(87)90072-3

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