Evidence for a quantum phase transition in two dimensions

M.P. Sarachik and S.A. Vitkalov

Physica A: Statistical Mechanics and its Applications, 2001, vol. 302, issue 1, 368-374

Abstract: For a broad range of electron densities n and temperatures T, data for the in-plane magnetoconductance of the two-dimensional system of electrons in silicon MOSFET's is shown to collapse onto a universal curve using a single parameter Hσ(n,T); the scaling parameter Hσ obeys the empirical relation Hσ=A(n)[Δ(n)2+T2]1/2. The characteristic energy kBΔ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n0, signaling the approach to a zero-temperature quantum phase transition. For densities near n0Hσ=AT so that the magnetoconductance scales with H/T. We suggest that this behavior is associated with a ferromagnetic instability.

Keywords: Metal–insulator transitions; Quantum phase transitions; Dilute two-dimensional systems; Silicon inversion layers (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:302:y:2001:i:1:p:368-374

DOI: 10.1016/S0378-4371(01)00455-1

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