Enhanced Thermoelectric Properties of Cu 3 SbSe 4 Compounds via Gallium Doping

Degang Zhao, Di Wu and Lin Bo
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Degang Zhao: School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
Di Wu: School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
Lin Bo: School of Materials Science and Engineering, University of Jinan, Jinan 250022, China

Energies, 2017, vol. 10, issue 10, 1-9

Abstract: In this study, the p -type Ga-doped Cu 3 Sb 1? x Ga x Se 4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu 3 Sb 1? x Ga x Se 4 compounds were investigated. As Ga content increased, the hole concentration of Cu 3 Sb 1? x Ga x Se 4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the Cu 3 Sb 1? x Ga x Se 4 compounds decreased as Ga content increased. The extra phonon scattering originating from Ga-doping effectively depressed the lattice thermal conductivity of the Cu 3 Sb 1? x Ga x Se 4 compounds. The ZT value of Cu 3 SbSe 4 markedly improved, which is primarily ascribed to the depressed lattice thermal conductivity and the increased electrical conductivity. The highest ZT value for the Cu 3 Sb 0.985 Ga 0.015 Se 4 compound was 0.54 at 650 K, which is two times higher than that of a pure Cu 3 SbSe 4 compound.

Keywords: thermoelectric; Cu 3 SbSe 4; gallium doping; spark plasma sintering (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
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