Electrothermal Model of SiC Power BJT

Joanna Patrzyk, Damian Bisewski and Janusz Zarębski
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Joanna Patrzyk: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Damian Bisewski: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Janusz Zarębski: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland

Energies, 2020, vol. 13, issue 10, 1-9

Abstract: This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

Keywords: BJT; modelling; self-heating; silicon carbide; SPICE (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
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