Mitigating Potential-Induced Degradation (PID) Using SiO 2 ARC Layer

Mahmoud Dhimish, Yihua Hu, Nigel Schofield and Romênia G. Vieira
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Mahmoud Dhimish: Department of Engineering and Technology, University of Huddersfield, Huddersfield HD1 3DH, UK
Yihua Hu: Department of Electronic Engineering, University of York, York YO10 5DD, UK
Nigel Schofield: Department of Engineering and Technology, University of Huddersfield, Huddersfield HD1 3DH, UK
Romênia G. Vieira: Department of Engineering and Technology, Semi-Arid Federal University, Mossoró 59626-105, Brazil

Energies, 2020, vol. 13, issue 19, 1-12

Abstract: Potential-induced degradation (PID) of photovoltaic (PV) cells is one of the most severe types of degradation, where the output power losses in solar cells may even exceed 30%. In this article, we present the development of a suitable anti-reflection coating (ARC) structure of solar cells to mitigate the PID effect using a SiO 2 ARC layer. Our PID testing experiments show that the proposed ARC layer can improve the durability and reliability of the solar cell, where the maximum drop in efficiency was equal to 0.69% after 96 h of PID testing using an applied voltage of 1000 V and temperature setting at 85 °C. In addition, we observed that the maximum losses in the current density are equal to 0.8 mA/cm 2 , compared with 4.5 mA/cm 2 current density loss without using the SiO 2 ARC layer.

Keywords: solar cells; PID mitigation; ARC; electroluminescence imaging; current density (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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