Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

Loreine Makki, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot and Julien Weckbrodt
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Loreine Makki: Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France
Marc Anthony Mannah: Department of Electrical Engineering, School of Engineering, The International University of Beirut BIU, Beirut, Lebanon/Lebanese International University LIU, Bekaa, Lebanon
Christophe Batard: Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France
Nicolas Ginot: Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France
Julien Weckbrodt: Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France

Energies, 2021, vol. 14, issue 13, 1-16

Abstract: Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode (CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occurrences intending to validate experimental tests. The correlation between stray capacitance and dv/dt immunity results after shielding insertion will be reported.

Keywords: wide-bandgap; gate-driver; planar transformer; CM noise; ANSYS Q3D Extractor; SiC MOSFET; shielding (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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