Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2
Nan Chen,
Hangtian Zhu (),
Guodong Li,
Zhen Fan,
Xiaofan Zhang,
Jiawei Yang,
Tianbo Lu,
Qiulin Liu,
Xiaowei Wu,
Yuan Yao,
Youguo Shi and
Huaizhou Zhao ()
Additional contact information
Nan Chen: Chinese Academy of Sciences
Hangtian Zhu: Chinese Academy of Sciences
Guodong Li: Chinese Academy of Sciences
Zhen Fan: Chinese Academy of Sciences
Xiaofan Zhang: Chinese Academy of Sciences
Jiawei Yang: Chinese Academy of Sciences
Tianbo Lu: Chinese Academy of Sciences
Qiulin Liu: Chinese Academy of Sciences
Xiaowei Wu: Chinese Academy of Sciences
Yuan Yao: Chinese Academy of Sciences
Youguo Shi: Chinese Academy of Sciences
Huaizhou Zhao: Chinese Academy of Sciences
Nature Communications, 2023, vol. 14, issue 1, 1-9
Abstract:
Abstract The low-temperature thermoelectric performance of Bi-rich n-type Mg3(Bi,Sb)2 was limited by the electron transport scattering at grain boundaries, while removing grain boundaries and bulk crystal growth of Mg-based Zintl phases are challenging due to the volatilities of elemental reactants and their severe corrosions to crucibles at elevated temperatures. Herein, for the first time, we reported a facile growth of coarse-grained Mg3Bi2-xSbx crystals with an average grain size of ~800 μm, leading to a high carrier mobility of 210 cm2 · V−1 · s−1 and a high z of 2.9 × 10−3 K−1 at 300 K. A $$\Delta$$ Δ T of 68 K at Th of 300 K, and a power generation efficiency of 5.8% below 450 K have been demonstrated for Mg3Bi1.5Sb0.5- and Mg3Bi1.25Sb0.75-based thermoelectric modules, respectively, which represent the cutting-edge advances in the near-room temperature thermoelectrics. In addition, the developed grain growth approach can be potentially extended to broad Zintl phases and other Mg-based alloys and compounds.
Date: 2023
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DOI: 10.1038/s41467-023-40648-5
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