Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Jun Zhou, Guitao Zhang, Wenhui Wang, Qian Chen, Weiwei Zhao, Hongwei Liu, Bei Zhao (), Zhenhua Ni () and Junpeng Lu ()
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Jun Zhou: Southeast University
Guitao Zhang: Southeast University
Wenhui Wang: Southeast University
Qian Chen: Southeast University
Weiwei Zhao: Southeast University
Hongwei Liu: Nanjing Normal University
Bei Zhao: Southeast University
Zhenhua Ni: Southeast University
Junpeng Lu: Southeast University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm−1 and a mobility as high as ~ 690.7 cm2 V−1 s−1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm−1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.

Date: 2024
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DOI: 10.1038/s41467-024-45940-6

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