Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition

Xingchen Pang, Yang Wang (), Yuyan Zhu, Zhenhan Zhang, Du Xiang (), Xun Ge, Haoqi Wu, Yongbo Jiang, Zizheng Liu, Xiaoxian Liu, Chunsen Liu, Weida Hu () and Peng Zhou ()
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Xingchen Pang: Fudan University
Yang Wang: Fudan University
Yuyan Zhu: Fudan University
Zhenhan Zhang: Fudan University
Du Xiang: Fudan University
Xun Ge: Chinese Academy of Sciences
Haoqi Wu: Fudan University
Yongbo Jiang: Fudan University
Zizheng Liu: Fudan University
Xiaoxian Liu: Fudan University
Chunsen Liu: Fudan University
Weida Hu: Chinese Academy of Sciences
Peng Zhou: Fudan University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm2) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 106, and exceptionally high room-temperature mobility up to 406.7 cm2 V−1 s−1, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm–940 nm), achieving function of motion detection and recognition.

Date: 2024
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DOI: 10.1038/s41467-024-46050-z

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