Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Zhongqiang Chen, Hongsong Qiu, Xinjuan Cheng, Jizhe Cui, Zuanming Jin, Da Tian, Xu Zhang, Kankan Xu, Ruxin Liu, Wei Niu, Liqi Zhou, Tianyu Qiu, Yequan Chen, Caihong Zhang, Xiaoxiang Xi, Fengqi Song, Rong Yu, Xuechao Zhai (), Biaobing Jin (), Rong Zhang () and Xuefeng Wang ()
Additional contact information
Zhongqiang Chen: Nanjing University
Hongsong Qiu: Nanjing University
Xinjuan Cheng: Nanjing University of Science and Technology
Jizhe Cui: Tsinghua University
Zuanming Jin: University of Shanghai for Science and Technology
Da Tian: Nanjing University
Xu Zhang: Nanjing University
Kankan Xu: Nanjing University
Ruxin Liu: Nanjing University
Wei Niu: Nanjing University
Liqi Zhou: Nanjing University
Tianyu Qiu: Nanjing University
Yequan Chen: Nanjing University
Caihong Zhang: Nanjing University
Xiaoxiang Xi: Nanjing University
Fengqi Song: Nanjing University
Rong Yu: Tsinghua University
Xuechao Zhai: Nanjing University of Science and Technology
Biaobing Jin: Nanjing University
Rong Zhang: Nanjing University
Xuefeng Wang: Nanjing University

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

Date: 2024
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DOI: 10.1038/s41467-024-46821-8

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