High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Qingxuan Li (), Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang and Lin Chen ()
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Qingxuan Li: Anhui University
Siwei Wang: Fudan University
Zhenhai Li: Fudan University
Xuemeng Hu: Fudan University
Yongkai Liu: Fudan University
Jiajie Yu: Fudan University
Yafen Yang: Fudan University
Tianyu Wang: Fudan University
Jialin Meng: Fudan University
Qingqing Sun: Fudan University
David Wei Zhang: Fudan University
Lin Chen: Fudan University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO2 (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (ION/IOFF) of over 108, and high endurance up to 2×107 cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorphic properties. The device exhibits excellent bending reliability over 5×105 pulse cycles at a bending radius of 5 mm. The efficient integration of hafnium-based ferroelectric materials with promising ultrathin channel materials (ITO) offers unique opportunities to enable high-performance back-end-of-line (BEOL) compatible wearable FeFETs for edge intelligence applications.

Date: 2024
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DOI: 10.1038/s41467-024-46878-5

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