Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

Chao Zhou, Liyang Ma, Yanpeng Feng, Chang-Yang Kuo, Yu-Chieh Ku, Cheng-En Liu, Xianlong Cheng, Jingxuan Li, Yangyang Si, Haoliang Huang, Yan Huang, Hongjian Zhao, Chun-Fu Chang, Sujit Das, Shi Liu () and Zuhuang Chen ()
Additional contact information
Chao Zhou: Harbin Institute of Technology
Liyang Ma: Westlake University
Yanpeng Feng: Chinese Academy of Sciences
Chang-Yang Kuo: National Yang Ming Chiao Tung University
Yu-Chieh Ku: National Yang Ming Chiao Tung University
Cheng-En Liu: National Yang Ming Chiao Tung University
Xianlong Cheng: Harbin Institute of Technology
Jingxuan Li: Harbin Institute of Technology
Yangyang Si: Harbin Institute of Technology
Haoliang Huang: Southern University of Science and Technology
Yan Huang: Harbin Institute of Technology
Hongjian Zhao: Jilin University
Chun-Fu Chang: Max-Planck Institute for Chemical Physics of Solids
Sujit Das: Indian Institute of Science
Shi Liu: Westlake University
Zuhuang Chen: Harbin Institute of Technology

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

Date: 2024
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DOI: 10.1038/s41467-024-47194-8

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