Photonic-electronic integrated circuit-based coherent LiDAR engine

Anton Lukashchuk, Halil Kerim Yildirim, Andrea Bancora, Grigory Lihachev, Yang Liu, Zheru Qiu, Xinru Ji, Andrey Voloshin, Sunil A. Bhave, Edoardo Charbon () and Tobias J. Kippenberg ()
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Anton Lukashchuk: Swiss Federal Institute of Technology Lausanne (EPFL)
Halil Kerim Yildirim: Advanced Quantum Architecture Laboratory (AQUA), Swiss Federal Institute of Technology Lausanne (EPFL)
Andrea Bancora: Swiss Federal Institute of Technology Lausanne (EPFL)
Grigory Lihachev: Swiss Federal Institute of Technology Lausanne (EPFL)
Yang Liu: Swiss Federal Institute of Technology Lausanne (EPFL)
Zheru Qiu: Swiss Federal Institute of Technology Lausanne (EPFL)
Xinru Ji: Swiss Federal Institute of Technology Lausanne (EPFL)
Andrey Voloshin: Swiss Federal Institute of Technology Lausanne (EPFL)
Sunil A. Bhave: Purdue University
Edoardo Charbon: Advanced Quantum Architecture Laboratory (AQUA), Swiss Federal Institute of Technology Lausanne (EPFL)
Tobias J. Kippenberg: Swiss Federal Institute of Technology Lausanne (EPFL)

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunity to interference. However, wafer-scale integration of these systems has been challenged by stringent requirements on laser coherence, frequency agility, and the necessity for optical amplifiers. Here, we demonstrate a photonic-electronic LiDAR source composed of a micro-electronic-based high-voltage arbitrary waveform generator, a hybrid photonic circuit-based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide amplifier. Importantly, all systems are realized in a wafer-scale manufacturing-compatible process comprising III-V semiconductors, silicon nitride photonic integrated circuits, and 130-nm SiGe bipolar complementary metal-oxide-semiconductor (CMOS) technology. We conducted ranging experiments at a 10-meter distance with a precision level of 10 cm and a 50 kHz acquisition rate. The laser source is turnkey and linearization-free, and it can be seamlessly integrated with existing focal plane and optical phased array LiDAR approaches.

Date: 2024
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DOI: 10.1038/s41467-024-47478-z

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