Dualistic insulator states in 1T-TaS2 crystals

Yihao Wang, Zhihao Li, Xuan Luo, Jingjing Gao, Yuyan Han, Jialiang Jiang, Jin Tang, Huanxin Ju, Tongrui Li, Run Lv, Shengtao Cui, Yingguo Yang, Yuping Sun, Junfa Zhu, Xingyu Gao, Wenjian Lu (), Zhe Sun (), Hai Xu (), Yimin Xiong () and Liang Cao ()
Additional contact information
Yihao Wang: Chinese Academy of Sciences
Zhihao Li: Chinese Academy of Sciences
Xuan Luo: Chinese Academy of Sciences
Jingjing Gao: Chinese Academy of Sciences
Yuyan Han: Chinese Academy of Sciences
Jialiang Jiang: Chinese Academy of Sciences
Jin Tang: Anhui University
Huanxin Ju: Ltd.
Tongrui Li: University of Science and Technology of China
Run Lv: Chinese Academy of Sciences
Shengtao Cui: University of Science and Technology of China
Yingguo Yang: Fudan University
Yuping Sun: Chinese Academy of Sciences
Junfa Zhu: University of Science and Technology of China
Xingyu Gao: Chinese Academy of Sciences
Wenjian Lu: Chinese Academy of Sciences
Zhe Sun: University of Science and Technology of China
Hai Xu: Chinese Academy of Sciences
Yimin Xiong: Anhui University
Liang Cao: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a “three-dimensional” control for the era of slidetronics.

Date: 2024
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DOI: 10.1038/s41467-024-47728-0

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