Local gate control of Mott metal-insulator transition in a 2D metal-organic framework
Benjamin Lowe,
Bernard Field,
Jack Hellerstedt,
Julian Ceddia,
Henry L. Nourse,
Ben J. Powell (),
Nikhil V. Medhekar () and
Agustin Schiffrin ()
Additional contact information
Benjamin Lowe: Monash University
Bernard Field: Monash University
Jack Hellerstedt: Monash University
Julian Ceddia: Monash University
Henry L. Nourse: Okinawa Institute of Science and Technology Graduate University
Ben J. Powell: The University of Queensland
Nikhil V. Medhekar: Monash University
Agustin Schiffrin: Monash University
Nature Communications, 2024, vol. 15, issue 1, 1-9
Abstract:
Abstract Electron-electron interactions in materials lead to exotic many-body quantum phenomena, including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ∼200 meV, consistent with dynamical mean-field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs.
Date: 2024
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DOI: 10.1038/s41467-024-47766-8
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