Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Yaoxin Li, Yongchao Wang, Zichen Lian, Hao Li, Zhiting Gao, Liangcai Xu, Huan Wang, Rui’e Lu, Longfei Li, Yang Feng, Jinjiang Zhu, Liangyang Liu, Yongqian Wang, Bohan Fu, Shuai Yang, Luyi Yang, Yihua Wang, Tianlong Xia, Chang Liu, Shuang Jia, Yang Wu, Jinsong Zhang, Yayu Wang and Chang Liu ()
Additional contact information
Yaoxin Li: Tsinghua University
Yongchao Wang: Tsinghua University
Zichen Lian: Tsinghua University
Hao Li: Tsinghua University
Zhiting Gao: Beijing Academy of Quantum Information Sciences
Liangcai Xu: Tsinghua University
Huan Wang: Renmin University of China
Rui’e Lu: Guangzhou University
Longfei Li: School of Physics, Peking University
Yang Feng: Beijing Academy of Quantum Information Sciences
Jinjiang Zhu: Fudan University
Liangyang Liu: Tsinghua University
Yongqian Wang: Renmin University of China
Bohan Fu: Renmin University of China
Shuai Yang: Renmin University of China
Luyi Yang: Tsinghua University
Yihua Wang: Fudan University
Tianlong Xia: Renmin University of China
Chang Liu: Southern University of Science and Technology
Shuang Jia: School of Physics, Peking University
Yang Wu: Beijing University of Chemical Technology
Jinsong Zhang: Tsinghua University
Yayu Wang: Tsinghua University
Chang Liu: Renmin University of China

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Date: 2024
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DOI: 10.1038/s41467-024-47779-3

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